semihow rev.a0,.mar 2016 HDAE30U60G a c mar 2016 absolute maximum ratings t c =25 c unless otherwise noted symbol parameter value unit v rrm peak repetitive reverse voltage 600 v v r dc blocking voltage i f(av) average rectifier forward current 30 a i fsm non - rectifier peak surge current @8.3ms 300 a t j , t stg operating and storage temperature range - 55 to +150 thermal resistance characteristics electrical characteristics symbol parameter typ. max. unit r jc junction -to - case -- 1.0 /w HDAE30U60G ultra fast recovery diode v rrm = 600 v i f = 30 a t rr(typ) = 33 ns cathode anode features ? ultrafast recovery time ? low forward voltage ? low stored charge general description with excellent performance in reverse recovery time, switching speed and rated current, HDAE30U60G can be utilized with high voltage power switches for voltage limitation and high - frequency current rectification. symbol parameter test conditions min typ max unit v br breakdown voltage i r = 50ua 600 -- -- v v f forward voltage i f = 30a, t c = 25 -- 1.25 1.5 v i r reverse current v r = 600v, t c = 25 -- -- 10 ua t rr reverse recovery time i f = 1a, di / dt = 200a/ s -- 33 -- ns i f = 30a, di / dt = 200a/ s -- 60 -- ns to - 247- 2l
semihow rev.a0,.mar 2016 HDAE30U60G typical characteristics figure 1. forward current derating curve figure 2. typical forward characterisitics figure 3. typical reverse characteristics figure 4. typical junction capacitance 1 10 100 200 400 600 800 junction capacitance [pf] reverse voltage [v] 25 50 75 100 125 150 0 5 10 15 20 25 30 35 average forward rectified current [a] case temperature [ o c] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 1 10 t a =25 o c t a =75 o c t a =125 o c instantaneous forward current [a] forward voltage [v] 0 100 200 300 400 500 600 0.1 1 10 100 1000 10000 t a =25 o c t a =75 o c instantaneous reverse current [na] reverse voltage [v] t a =125 o c
semihow rev.a0,.mar 2016 HDAE30U60G package dimension to - 247 - 2l
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